Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis
- Materials (Basel). 2024 Feb 22;17(5):1005. doi: 10.3390/ma17051005.
- 1. Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea.
- 2. Department of Materials Engineering, Gyeongsang National University, Jinju 52828, Republic of Korea.
- 3. Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju 52828, Republic of Korea.
- 4. Analysis and Standards Center, Korea Institute of Ceramic Engineering & Technology, Jinju 52851, Republic of Korea.
- 5. Division of High-Technology Materials Research, Korea Basic Science Institute, Busan 46742, Republic of Korea.
- 6. The Institute of Electronic Technology, College of IT Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
The discoloration switching appearing in the initial and final growth stages of 4H-silicon carbide (4H-SiC) single crystals grown using the physical vapor transport (PVT) technique was investigated. This phenomenon was studied, investigating the correlation with linear-type micro-pipe defects on the surface of 4H-SiC single crystals. Based on the experimental results obtained using time-of-flight secondary ion mass spectrometry (ToF-SIMS) and micro-Raman analysis, it was deduced that the orientation of the 4H-SiC c-axis causes an axial change that correlates with low levels of carbon. In addition, it was confirmed that the incorporation of additional elements and the concentrations of these doped impurity elements were the main causes of discoloration and changes in growth orientation. Overall, this work provides guidelines for evaluating the discoloration switching in 4H-SiC single crystals and contributes to a greater understanding of this phenomenon.